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AO8808A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications). AO8808AL is a Green Product ordering option. AO8808A and AO8808AL are electrically identical.
Features
VDS (V) = 20V ID = 7.9A (VGS = 10V) RDS(ON) < 14m (VGS = 10V) RDS(ON) < 15m (VGS = 4.5V) RDS(ON) < 20m (VGS = 2.5V) RDS(ON) < 28m (VGS = 1.8V) ESD Rating: 2000V HBM
TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 12 7.9 6.3 30 1.4 0.9 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 73 96 63
Max 90 125 75
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO8808A
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, V GS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A VGS=2.5V, ID=4A VGS=1.8V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=8A Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current 12 0.5 30 10.6 14.2 11.7 15.2 21.5 36 0.6 1 2.4 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.6 17.9 VGS=4.5V, VDS=10V, ID=8A 1.5 4.7 2.5 VGS=10V, V DS=10V, R L=1.2, RGEN=3 IF=8A, dI/dt=100A/s IF=8A, dI/dt=100A/s 7.2 49 10.8 20.2 8 14 18 15 20 28 0.75 1 Min 20 10 25 10 Typ Max Units V A A V V A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8808A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 35 30 25 ID (A) 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 30 25 RDS(ON) (m) 20 VGS=2.5V 15 VGS=4.5V 10 VGS=10V 5 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 35 30 RDS(ON) (m) 25 IS (A) 20 15 10 5 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C ID=5A 1.0E-01 1.0E-02 1.0E-03 25C 1.0E+01 1.0E+00 Normalized On-Resistance VGS=1.8V 1.6 ID=5A 1.4 VGS=4.5V VGS=2.5V VGS=1.5V 5 0 0 0.5 25C 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 2.5 ID(A) 20 15 10 125C 10 2.5V 4.5V 30 2V 25 VDS=5V
1.2
VGS=10V VGS=1.8V
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
125C
Alpha & Omega Semiconductor, Ltd.
AO8808A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 3000 VDS=10V ID=8A Capacitance (pF) 2500 2000 1500 1000 500 0 0 Coss Crss 5 10 15 20 Ciss
VDS (Volts) Figure 8: Capacitance Characteristics
100.0 10s 100s Power (W) 1ms 10ms 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 0.1s 10s DC
40 RDS(ON) limited
TJ(Max)=150C TA=25C
10.0 ID (Amps)
30
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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